BC846S ... BC848S
NPN
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren f眉r die Oberfl盲chenmontage
Dimensions / Ma脽e in mm
2
卤0.1
6.5
6
Version 2004-04-09
Power dissipation 鈥?Verlustleistung
Plastic case
Kunststoffgeh盲use
310 mW
SOT-363
0.01 g
6.5
5
4
0.9
卤0.1
1.25
卤0.1
卤0.1
2.1
Type
Code
1
2
3
Weight approx. 鈥?Gewicht ca.
Plastic material has UL classification 94V-0
Geh盲usematerial UL94V-0 klassifiziert
2.4
6 = C1
1 = E1
5 = B2
2 = B1
4 = E2
3 = C2
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/
C)
BC846S
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation 鈥?Verlustleistung
Collector current 鈥?Kollektorstrom (dc)
Peak Collector current 鈥?Kollektor-Spitzenstrom
Peak Base current 鈥?Basis-Spitzenstrom
Peak Emitter current 鈥?Emitter-Spitzenstrom
Junction temperature 鈥?Sperrschichttemperatur
Storage temperature 鈥?Lagerungstemperatur
B open
E open
C open
V
CE0
V
CB0
V
EB0
P
tot
I
C
I
CM
I
BM
- I
EM
T
j
T
S
65 V
80 V
Grenzwerte (T
A
= 25
/
C)
BC847S
45 V
50 V
6V
310 mW
1
)
100 mA
200 mA
200 mA
200 mA
150
/
C
- 65鈥? 150
/
C
BC848S
30 V
30 V
5V
Characteristics (T
j
= 25
/
C)
DC current gain 鈥?Kollektor-Basis-Stromverh盲ltnis
2
)
V
CE
= 5 V, I
C
= 10
:
A
V
CE
= 5 V, I
C
= 2 mA
h-Parameters at V
CE
= 5V, I
C
= 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverst盲rkung
Input impedance 鈥?Eingangs-Impedanz
Output admittance 鈥?Ausgangs-Leitwert
Reverse voltage transfer ratio
Spannungsr眉ckwirkung
h
fe
h
ie
h
oe
h
re
h
FE
h
FE
Kennwerte (T
j
= 25
/
C)
typ. 90 ... 270
110 ... 800
typ. 220 ... 600
1.6 ... 15 k
S
18 ...110
:
S
typ.1.5 ... 3 *10
-4
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (L枚tpad) an jedem Anschlu脽
2
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% 鈥?Gemessen mit Impulsen t
p
= 300
:
s, Schaltverh盲ltnis
#
2%
1
12
1
2